Molecular beam epitaxy of Si/ZnS/Si(100) heterostructures for fabrication of silicon-based quantum devices

Epitaxial Si/ZnS/Si heterostructures were grown for the purpose of developing silicon-based quantum devices. An arsenic passivation technique was used on silicon surfaces for the growth of ZnS. A two-step growth method was developed for the epitaxial growth of silicon on ZnS surfaces. Using the results of TEM (transmission electron microscopy), C-V (capacitance-voltage), RHEED (reflection high energy electron diffraction), and SIMS (secondary ion mass spectroscopy), we present studies of crystal defects, density of interface states, surface structure, and compositional profiles of the heterostructural materials.