Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes

Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes (TDs), forming Tunneling Bipolar Transistors (TBTs), is proposed and experimentally realized for the first time. The TBTs offer a new family of negative differential resistance transistors for applications in ultra-high speed and ultra-compact digital circuits. Especially, they can be incorporated into Si integrated circuits easily without complicated growth effort. In this paper, Si and InGaAs TDs will be described and compared in terms of device performance. Furthermore, the idea of a TBT will be demonstrated using a CBE grown structure and hybrid integration of Si devices.