Efficient I-V simulation of quantum devices using full bandstructure models

For several years it has been recognized that the single band effective mass model is insufficient to simulate quantum transport in material systems which are currently under investigation. This has prompted a growing effort on the part of theorists to include realistic bandstructures in quantum transport simulations. However, full bandstructure current-voltage calculations have proven to be numerically prohibitive. In this work we introduce an efficient technique to calculate current-voltage characteristics for quantum devices using tight-binding bandstructure models.