High performance microwave elements for SiGe MMICs

We demonstrate a low cost, manufacturable method for fabricating microwave elements on lossy substrates as required for Si-based devices. These microwave elements require a ground-plane on the surface of the Si substrate to shield the lossy dielectric below and use a 13 /spl mu/m thick layer of benzocyclobutene (BCB) for wave propagation. The performance of the transmission lines and MMICs thus fabricated are comparable to their GaAs counterparts.