Nonstationary response of MSM photodetectors

This paper analyses the influence of nonstationary effects on carrier transport in a Metal-Semiconductor-Metal Photodetector (MSM-PD) made of a two-valley semiconductor. A phenomenological model is used for 2D numerical simulation of carrier transport and intervalley transfer. The complete analysis of the time and frequency response of the MSM-PD has been made for various micron and submicron structures, bias voltages and incident light wavelengths.