Near IR sensitive liquid crystal light valve with hydrogenated amorphous silicon photoconductor

An ITO/a-Si:H photosensor has been used in a near IR sensitive LCLV. In preparation of the photosensor, two main problems have been solved. One is the enhancement of IR transmittance of ITO; the other is improvement of the ratio of photo/dark conductivity in a-Si:H in the near IR range. As a result, IR transmittance as high as 80% and ratio of photo/dark conductivity larger than one order of magnitude are obtained. Images converted from near IR scenery by the LCLV are observed.