Dynamic Characterization of Distortion in Hybrid Silicon Evanescent Phase Modulators

We report the dynamic distortion of hybrid silicon phase modulators for three types of active layers. The third-order intermodulation distortion for each modulator was measured under various bias conditions by means of a two-tone technique. A peak phase input intercept point of 2.6pi for doped quantum-well modulators was achieved at a reverse bias of 4 V and a signal frequency of around 500 MHz.