GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications

GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm
^-1
, allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based on the needs for applications like, e.g., pumping of Raman amplifiers, wavelength-stabilized tapered laser diodes are shown with maximum output powers of 1 W together with a high beam quality. Beam propagation factors
M

²
down to 1.4, high brightness of up to 23 MW/cm
²
middotsr, and nearly spatial single-mode emission have been obtained.