Epitaxial Silicon Microshell Vacuum-Encapsulated CMOS-Compatible 200 MHz Bulk-Mode Resonator

This paper shows the first successful combination of dielectrically-transduced 200 MHz resonators with the epi-silicon encapsulation process, and demonstrates a set of important capabilities needed for the construction of CMOS-compatible RF MEMS components. The result shows the resonant frequency of 207 MHz and a quality factor of 6,400. The high fQ (1.2times10
¹²
Hz) makes this encapsulated resonator an excellent candidate for applications in local oscillators and RF spectrum analyzers.