Resonant Tunneling Diodes with Very High Peak Current Density Using Thin Barrier and High Emitter Doping

We obtained InGaAs/AlAs double-barrier resonant tunneling diodes (DB RTDs) with very high peak current density using thin barrier and high emitter doping. The peak current density of 13 mA/mum
²
with the peak/valley current ratio of 1.5 was obtained for 1.4-nm-thick barrier and emitter doping concentration of 6 times 10
¹⁸
cm
^-3
. By these characteristics, oscillators with the fundamental oscillation exceeding 1 THz are sufficiently possible.