GaN-Based LEDs Output Power Improved by Textured GaN/Sapphire Interface Using In Situ $\hbox{SiH}_{\bf 4}$ Treatment Process During Epitaxial Growth

In this study, we demonstrate an
in

situ
roughening technique at the GaN/sapphire interface in GaN-based LEDs using a silane treatment (SiH
₄
treatment) process that forms a thin SiN
_x
layer with nanometer-sized holes on the sapphire surface that behave like a patterned sapphire substrate. A plurality of voids at the GaN/sapphire interface is observed according to the transmission electron microscopy analysis. With a 20 mA current injection, the results indicate that the typical output power of LEDs grown with and without the SiH
₄
treatment process are approximately 18.0 and 15.6 mW, respectively. In other words, the output power can be enhanced by 15% with the use of the SiH
₄
treatment process. The enhancement of output power is mainly due to light scattering at the naturally textured GaN/sapphire interface, which can lead to a higher escape probability for the photons emitted from the active layer in an LED.