An Analytical Method to Extract the Physical Parameters of a Solar Cell From Four Points on the Illuminated $J{-}V$ Curve

For a variety of solar cells, it is shown that the single exponential
J
-
V
model parameters, namely - ideality factor eta, parasitic series resistance
R

_s
, parasitic shunt resistance
R

_sh
, dark current
J

₀
, and photogenerated current
J

_ph
can be extracted simultaneously from just four simple measurements of the bias points corresponding to
V

_oc
, ~ 0.6
V

_oc
,
J

_sc
, and ~ 0.6
J

_sc
on the illuminated
J
-
V
curve, using closed-form expressions. The extraction method avoids the measurements of the peak power point and any dJ/dV (i.e., slope). The method is based on the power law
J
-
V
model proposed recently by us.