Conformal doping for FinFETs and precise controllable shallow doping for planar FET manufacturing by a novel B2H6/Helium Self-Regulatory Plasma Doping process

A new self-regulatory plasma doping (SRPD) technique with B
₂
H
₆
/helium gas plasma has been successfully developed that provide conformal doping for fins and precise controllable ultra-shallow doping for planar FET. Manufacturing level of process controllability (<1% on dose) of the new SRPD has been realized, and advantage of the SRPD has been verified with FinFETs with metal/high-k gate stack and planar pMOSFETs for the first time. Short channel effect (SCE) improvement for FinFETs is clearly obtained. Dramatically I
_on
enhancement (+14% I
_on
at the I
_off
of 10
^-8
A/um vs. ion implant ref.) with SCE suppression for planar pMOSFETs is also realized. This new SRPD will be the excellent compatible doping method for pMOS FinFETs as well as planar pMOSFETs extension for 32nm node and beyond.