A comprehensive study of flicker noise in plasma nitrided SiON p-MOSFETs: process dependence of pre-existing and NBTI stress generated trap distribution profiles

Flicker noise is studied in SiON p-MOSFETs before and after NBTI stress. Pre-stress noise magnitude and slope are correlated and used to verify N density distribution in gate dielectric. Post-stress noise magnitude and slope are used to explore distribution of trap generation during NBTI stress, and independently verified by using MFCP measurements. Consequence of N distribution (in SiON) on NBTI stress and recovery results is shown.