Reliability of Nanoelectromechanical Nonvolatile Memory (NEMory) Cells

The reliability of nanoelectromechanical nonvolatile memory cells is investigated. Improvements in beam design, material, and operating ambient condition are shown to be effective for enhancing program/erase endurance. The fabricated cell demonstrated program/erase endurance exceeding 200 dc-voltage sweep cycles and projected retention time more than ten years.