Improvement of On–Off-Current Ratio in $ \hbox{TiO}_{\rm x}$ Active-Channel TFTs Using $\hbox{N}_{2} \hbox{O}$ Plasma Treatment

Without sacrificing the on-current in the transfer characteristics, we have successfully reduced the off-current part by the optimal N
₂
O plasma treatment to improve the on-off-current ratio in n-type titanium oxide ( TiO
_x
) active-channel thin-film transistors. While the high-power (275 W) N
₂
O plasma treatment oxidizes the whole TiO
_x
channel and results in the reduction of both on- and off-current, the optimized low-power (150 W) process makes the selective oxidation of the top portion in the channel and reduces only the off-current significantly. Increase in on-off ratio by almost five orders of magnitude is achieved without change in on-current by using the presented method.