Quantum Confine Stark Effect Suppressed Nanorod Structure Light Emitting Diode

We present a practical process to fabricate InGaN/GaN multiple-quantum-well nanorod structure. The nanorod light emitting diode array is realized by using monolayer silica nano-particle as nano-mask to define nanorod structure and a space layer to prevent p-type contact from connecting n-type GaN. The quantum confine stark effect is suppressed in nanorod device which is proved by electroluminescence peak wavelength of nanorod LEDs. These peaks of nanorod LEDs are nearly constant at an injection current between 25 mA and 100 mA.