Poisson modeling of ultraconfined AlGaAs-GaAs semiconductor devices with selective doping

An ultraconfined compound semiconductor device is investigated by using a two-dimensional iterative Poisson solver (TIPS). The device confines electrons into one-dimensional channels through the use of selective doping. The electron confinement is found to be a sensitive function of gate width and implant dose of the selective doping, and it is limited by the lateral straggle of the implantation.<
>