Comparison of InGaAs/InP p-i-n detectors grown by hydride and organometallic vapor phase epitaxy

In/sub 0.53/Ga/sub 0.47/As-InP photodetectors fabricated from two hydride vapor-phase epitaxy (VPE) and two organometallic vapor-phase epitaxy (OMVPE) wafers are discussed. All were processed in the same lot in a commercial production line. The wafers were obtained from four major laboratories around the world. Significant variations in photoluminescence intensity of the layers was observed. However, all four wafers had dark current yields of around 90% or more, demonstrating the suitability of both techniques for detector fabrication under identical processing conditions.<
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