A novel silicon carbide based high-bidirectional switching device for high-voltage control applications

A new structure of metal/i-SiC/c-Si(n/sup +/-P) (MISS) bidirectional switching device is successfully developed for the first time. A thick sputtered SiC layer is used, instead of the thin insulating layer in the conventional MISS structure. Due to the wide band gap of the silicon carbide (2.3 eV for /spl beta/-SiC), this bidirectional switching device possesses a high switching voltage, e.g. 134 V for the 3000 /spl Aring/ silicon carbide thickness. The corresponding switching currents and holding current are 0.16 mA and 1.1 mA, respectively. Experimental results show the switching voltage V/sub s/ increases with increasing intrinsic silicon carbide thickness. This study indicates that the silicon carbide bidirectional switching device is a promising element for high-voltage switching applications.