A super low noise AlInAs/InGaAs HEMT processed by selective wet gate recess etching

A 0.15 /spl mu/m T-shaped gate AlInAs/InGaAs high electron mobility transistor (HEMT) with excellent RF performance has been developed using a selective wet gate recess etching. The etching condition for recess formation is optimized and an extremely low minimum noise figure (F/sub min/) of 0.9 dB with an associated gain (G/sub a/) of 7.0 dB has been achieved at 60 GHz for a SiON-passivated device.