Discrete ESD protection diode during a system level pulse: Comparison of simulation with measurements

The behavior of a discrete ESD protection diode during a system level ESD pulse was simulated and compared with a time resolved measurement of the real diode. The simulation results for ESD destruction level, location of the damaged zone inside the diode, and the slope of the voltage drop are very close to the measured data. Also a sudden voltage drop caused by the 2
^nd
thermal breakdown was predicted very well by simulation.