High Performance and High Current Integrated Inductors using a Double Ultra Thick Copper Module in an Advanced 65 nm RF CMOS Technology

This paper presents high Q and high current on-chip inductors manufactured in an innovative Radio Frequency (RF) Back End Of Line (BEOL), made of two 3 mum thick top copper levels, integrated in an Advanced Low Power 65 nm RF CMOS technology. Achieved inductors using this optimized RF BEOL are firstly reported, compared with those using one single thick copper level BEOL, and benchmarked with current ones fabricated in a standard CMOS BEOL. According to measurement results, reported inductors offer quality factor Q greater than 22 and current capability I
_max
up to 20 mA/mum @ 125degC, performances suitable for RF power applications.