Study of cobalt doping on the electrical and optical properties of titanium dioxide thin film prepared by sol-gel method

Undoped Nanostructured Titanium Dioxide thin film (UN) and Cobalt doped nanostructured (CoDN) TiO
2
thin film has successfully prepared using sol-gel method and deposited onto silicon and glass substrate by spin coating technique. Nanostructured TiO
2
thin film were prepared at 0.1M, 0.2M, 0.3M and 0.4M, Co doped TiO
2
thin film was prepared with additional of ion Co at 1at%. The electrical and optical properties of the UN TiO
2
thin films and CoDN TiO
2
thin film has successfully studied. The electrical properties indicates that both 0.2M of UN TiO
2
thin film and CoDN TiO
2
thin film gives low of resistance compare to other sol-gel concentration. As we compared both UN TiO
2
thin film and CoDN TiO
2
thin film, the lowest resistance comes from Cobalt doped TiO
2
thin film. For optical properties, CoDN TiO
2
thin film gives the highest percentage of transmittance, which is above 80% in visible region (450-1000nm). As for band gap energy, there is decreasing in band gap energy compared from UN TiO
2
thin film to CoDN TiO
2
thin film.