Semiconducting carbon thin film deposition on silicon by electroplating

Carbon thin films were deposited on silicon (Si) substrates by electrolysis of methanol. The effect of camphor (C
₁₀
H
₁₆
O) - a natural source, incorporation in methanol is investigated. Camphor with varying amount (2%, 4%, 6% and 8%) was mixed in methanol solvent to prepare the electrolytes. Silicon substrates were mounted on the negative electrode. Remarkable change in the variation of current density as a function of applied potential was observed with camphor content. For Si substrates current density was highest for the 6% camphor in methanol solution. P
^H
of various solutions before and after deposition has been analyzed. Camphor has an influence on P
^H
. The films was characterized by optical microscopy, scanning electron microscopy (SEM) and fourier transform of infrared (FTIR) spectroscopy. From optical microscopy and SEM micrograph sharp differences between deposited films are observed. FTIR spectroscopy analyses indicate presence of both sp
²
and sp
³
C-H stretch network therefore, reveals semiconducting nature of the deposited carbon films. The ratios of sp
³
/sp
²
carbon bonding in deposited films are observed to vary with camphor in methanol solution.