Formation of the Si-Schottky junctions by simple electrochemical process and verification of their characteristics by TCAD

A very simple electrochemical process is used to deposit platinum (Pt) and nickel (Ni) on silicon (Si) substrate to form Schottky junction. The electrical behaviors of these Schottky junctions are observed. We also used TCAD (SILVACO 3.2) to fabricate these Schottky junctions and to observe the electrical behavior of these devices, and it shows that experimental and simulated results are close.