High selectivity and wide stop band silicon BPF

In this article, design and development of band pass filter at X-band with the FBW of ∼ 4% on silicon substrate has been presented using the dual-behavior resonator (DBR) approach. The proposed topology uses single section coupled lines to maintain the compactness and can be easily realizable with the standard Microwave Integrated Circuit fabrication techniques. The designed filter shows high selectivity at upper band and wider stops band characteristics. The insertion loss better than 3.5 dB and return loss better than 12 dB are achieved at center frequency of 8 GHz using high resistivity silicon substrate.