Flip-chip planar GaInAs/InP p-i-n photodiodes analysis of frequency response

High-speed response, high-manufacturing-yield photodiodes will be needed for optical interconnection in computer and for broadband networks. Frequency responses of a new planar GaInAs/lnP p-i-n photodiode for flip-chip bonding are analyzed. To study changes caused by the new structure, responses are related to device parameters including photoabsorption layer thickness, p-i-n junction diameter, and the size of the forward biased p-i-n junction. Forward biasing is a peculiarity of our photodiodes. A photodiode with an optimized design showed good characteristics.