A 2.5 GHz low phase noise oscillator design in 65nm CMOS technology with reduced current consumption

A 2.5 GHz low phase noise oscillator is presented in this paper. The oscillator was design using a Solidly Mounted BAW Resonator (SMR BAW) as resonant element. The resonator exhibits a parallel resonance Q factor around 1300 at 2.54 GHz. The core oscillator was designed using STMicroelectronics 65 nm CMOS technology. It exhibits 632 mV output (zero-to-pic) with phase noise performance of -92 dBc/Hz, -109 dBc/Hz, and -130 dBc/Hz at 2 KHz, 10 KHz and 100 KHz respectively. It consumes 1 mA from a 1.2 V source.