High sensitivity pH sensor using AlXGa1-XN/GaN HEMT heterostructure design

Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al
0.3
Ga
0.7
N has the excellent performance among Al
0.17
Ga
0.83
N and Al
0.25
Ga
0.75
N, and the performance can be achieved about −0.923 mA/mm-pH during pH 4–10, and −2.24 mA/mm-pH during pH 7–8. The result indicates that the better performance of Al
0.3
Ga
0.7
N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.