Performance of interface engineered SiNx/ICL/InP/In/sub 0.53/Ga/sub 0.47/As/InP doped channel HIGFET's

SiN/sub x//InP/InGaAs doped channel passivated heterojunction insulated gate field effect transistors (HIGFETs) have been fabricated for the first time using an improved In-S interface control layer (ICL). The insulated gate HIGFETs exhibit very low gate leakage (10 nA@V/sub GS/=/spl plusmn/5 V) and I/sub DS/ (sat) of 250 mA/mm. The doped channel improves the DC characteristics and the HIGFETs show transconductance of 140-150 mS/mm (L/sub g/=2 μm), f
_T
of 5-6 GHz (L/sub g/=3 μm), and power gain of 14.2 dB at 3 GHz. The ICL HIGFET technology is promising for high frequency applications.