Experimental demonstration of a buried-channel charge-coupled device in 6H silicon carbide

Fundamental operation of the first buried-channel charge-coupled device (BCCD) in 6H-SiC is presented. The n-type buried-channel was formed by ion implantation of nitrogen, and a double level overlapping-polysilicon-gate process was adapted to the SiC MOS system. An electron mobility of 200 cm/sup 2//Vs was measured in the channel, which is doped 1.6/spl times/10/sup 17/ cm/sup -3/. An eight-stage, four-phase BCCD shift register was operated in the pseudo-two-phase configuration at room temperature. At 5.5 kHz, the charge transfer efficiency is greater than 99.4%.