Trajectory split method for Monte Carlo simulation of ion implantation

A new method for the acceleration of two- and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is presented. The trajectory split method ensures a much better statistical representation in regions with a dopant concentration several orders of magnitudes smaller than the maximum. As a result, the time required to perform a simulation with comparable statistical accuracy is drastically reduced. The advantages of the new approach have been confirmed by a thorough statistical analysis.<
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