Fabrication and characteristics of ZnO-based thin film transistors

ZnO-based thin-film transistors (TFT) have been fabricated on p-Si (100) substrates by radio frequency (rf) magnetron sputtering at room temperature with a bottom gate configuration. The XRD and SEM show that ZnO films had high crystalline quality. The ZnO films present an average optical transmission (including the glass substrate) of 80 % in the visible part of the spectrum. The electrical properties of ZnO-based TFTs were investigated by I
D
-V
D
and I
D
-V
G
measurements. The ZnO TFT operates in the enhancement mode with a channel mobility of 6. 86 cm
²
/V·s. The combination of transparency, high channel mobility and room temperature processing makes the ZnO-TFT a very promising low cost optoelectronic device for the next generation of flat panel display (FDP).