Extraction of voltage transfer characteristic of inverter based on TSNWFETs

In this paper, voltage transfer characteristic (VTC) of inverter based on Twin Silicon Nanowire MOSFETs (TSNWFETs) is extracted. TSNWFETs with 40 nm gate length and 10 nm nanowire diameter are used to construct inverter. Gain, switching threshold voltage, noise margin and transition width are extracted from VTC to show the performance of inverter based on TSNWFETs. In addition, these performance parameters are extracted by varying the supply voltage.