Novel vertical sidewall MOSFETs with embedded gate

In this paper we bring up a new progressive vertical structure (EGVMOS) with Embedded Gate for a MOSFET. This new structure provides not only eliminating the kink effect, but also having good gate controllability. ISE TCAD 2D simulation is carried out for evaluating its different electric characteristics. Being compared with the other vertical devices, the new device using the different implant tilts approves good results and demonstrates better device behaviors.