Scaling study of nanowire and multi-gate MOSFETs

In this paper, comprehensive comparisons of nanowire and multi-gate nMOSFETs in scaling capability using three-dimensional numerical simulations are presented. Their short channel effects and device performances are also investigated. The nanowire device requires less device dimension constraint on body diameter due to perfect surrounding gate-to-gate capacitive coupling and hence it is promising at sub-45 nm node.