The Electrical and Interfacial Properties of Metal-High-$\kappa$ Oxide-Semiconductor Field-Effect Transistors With $\hbox{LaAlO}_{3}$ Gate Dielectric

LaAlO
₃
is a promising candidate for gate dielectric of future VLSI devices. In this letter, n-channel metal-oxide-semiconductor field-effect transistors with LaAlO
₃
gate dielectric were fabricated, and the electron mobility degradation mechanisms were studied. The leakage current density is 7.6times10
^-5
A/cm
²
at -1 V. The dielectric constant is 17.5. The surface-recombination velocity, the minority-carrier lifetime, and the effective capture cross section of surface states were extracted from gated-diode measurement. The rate of threshold voltage change with temperature (DeltaV
_T
/DeltaT) from 11 K to 400 K is -1.51 mV/K, and the electron mobility limited by surface roughness is proportional to E
_eff

^-0.66
.