Strain issues on III–V compound semiconductors - imaging of strain distribution and crystal growth

Strain issues on various commercial-substrates of InP, GaAs and GaP have been investigated by evaluating residual strain distribution with a scanning infrared polariscope (SIRP) and a near-infrared imaging polariscope (NIRIP). Since the thermal history during crystal growth and device-fabrication processes is sensitively reflected in the residual strain distribution, it is useful not only to control the residual strain in the substrates but also to avoid substrate breakage and slip generation.