Monolithic integration of InP based heterostructures on silicon using crystalline Gd2O3 buffers

A new approach of monolithic integration of InP based heterostructures on silicon is proposed, based on the plastic compliant behavior of the InP/Gd
₂
O
₃
(111) heterointerface. When grown on a crystalline Gd
₂
O
₃
/Si(111) buffer, InP takes its bulk lattice parameter as soon as the growth begins, allowing the monolithic growth of good quality InAsP/InP heterostructures on Si, as attested by room-temperature photoluminescence experiments.