InAs quantum dot structures on InP grown by MOVPE for mid-infrared emission

High density, uniform InAs quantum dots (QDs) have been grown on In
_x
Ga
_1-x
As/InP matrix by metal-organic vapor phase epitaxy (MOVPE) using a two-step growth method. By sandwiching the InAs QDs between In
_x
Ga
_1-x
As barrier layers, emission wavelength of the InAs/In
_x
Ga
_1-x
As/InP QD structures reaches >2.3 mum.