Thermal analysis of PT IGBT by using ANSYS

As the power density and switching frequency increase, thermal analysis of power electronics system becomes imperative. The analysis provides valuable information on the semiconductor rating, long-term reliability and efficient heat-sink design. In this paper, the thermal model and thermal distribution of discrete Insulated Gate Bipolar Transistor with non heat-sink and heat-sink has been studied. For analysis of thermal distribution, we obtained results by using finite element simulator, ANSYS and compared with experimental data.