S&D salicidation for advanced CMOS technology: Ge, SiGe, Si:C, and sSibased devices

▪ Strained and Ge-based materials have great interests for CMOS technology enhancement ▪ However, their introduction as channel and/or S&D materials has a strong impact on the Salicide process which needs adaptations in order to keep the expected benefit induced by these new materials ▪ Indeed, new issues related to the silicidation (germanidation) of these advanced materials have emerged and most of them have been solved (exemple : Ge lateral diffusion) ▪ In addition to strained and Ge-based materials, the choice of the silicide/germanide contact material in itself, as well as the associated salicide process, are key areas for further performance enhancement (interface engineering, dual silicide approach…)