Corrections to “Growth of Lanthanum Manganate Buffer Layers for Coated Conductors via a Metal–Organic Decomposition Process”

In our prior paper, we reported forming (110)-oriented LaMnO
₃
on a biaxially textured Ni-3at%W substrate. Chemical analysis of these films subsequent to publishing the paper showed only La and O-there was no Mn present in the film. The film was actually (400)-oriented La
₂
O
₃
with the cubic bixbyite structure. Subsequent studies also showed that MnO film is not stable on Ni and Ni-W substrate surfaces at 1100
^deg
C and P
_O2
= 10
^-16
atm where bulk MnO is stable.