Superior low-pressure-oxidized Si3N4 films on rapid-thermal-nitrided poly-Si for high-density DRAM's

High-performance stacked storage capacitors with small effective-oxide-thickness (t/sub ox,eff/) as thin as 37 /spl Aring/ has been achieved using low-pressure-oxidized nitride films deposited on NH/sub 3/-nitrided poly-Si electrodes. The capacitors exhibit excellent leakage property and time-dependent dielectric-breakdown (TDDB) characteristics. Furthermore, this technique is promising for the 64- and 256-Mb dynamic-random-access-memory (DRAM) applications because the process temperatures never exceed 850/spl deg/C.<
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