High performance 70nm gate length Germanium-On-Insulator pMOSFET with high- /metal gate

We demonstrate for the first time 70nm gate length TiN/HfO
2
pMOSFETs on 200mm GeOI wafers, with excellent performances: I
ON
=330μA/μm & I
OFF
=1μA/μm @ V
d
=-1.2V (without germanide). These performances are obtained using adapted counterdoping and pocket implants. We report the best CV/I vs. I
OFF
trade-off for Ge or GeOI: CV/I=4.4ps, I
OFF
=500nA/μm @ V
d
=-1V. Moreover, based on fine electrical characterizations (μ, D
it
, R
access…
) at T=77-300K, in-depth analysis of both ON & OFF states were carried out. Besides, calibrated TCAD simulations were performed to predict the performance enhancements which can be theoretically reached after further device optimization. By using germanide and reducing both interface state density and diode leakage we expect I
ON
=450μA/μm, I
OFF
=100nA/μm @ V
d
=−1V for L
g
=70nm.