Properties of melt-grown ZnSe solid-state radiation detectors

Zinc Selenide (ZnSe) crystals grown using the High Pressure Bridgman (HPB) technique were used to fabricate solid-state radiation detectors measuring 10/spl times/10/spl times/2 mm/sup 3/ Sputtered platinum and gold contacts were applied to polished detector blanks. Voltage versus current characteristics were determined for the devices at 25/spl deg/C. Pulse height spectra were obtained using /sup 241/Am and /sup 109/Cd at both 25/spl deg/C and 150/spl deg/C with applied bias of 9000 V/cm. Current versus temperature was measured over the temperature range of 30/spl deg/C to 150/spl deg/C. Performance was measured at energies of 22.1 and 59.5 keV over a temperature range of -70/spl deg/C to 170/spl deg/C. Current versus dose rate was measured with 662 keV gamma irradiation. A value of the Mobility-Lifetime product (/spl mu//spl tau/) for electrons was estimated. Time and temperature dependence of photo-peak position using Pulse Height Analysis (PHA) was studied.<
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