Spectrometric characteristic improvement of CdTe detectors

A new pulse shape correction method combined with a pulse shape selection method has been proposed for a CdTe detectors energy resolution improvement and increasing the total absorption peak efficiency. The capabilities of the new technique for the spectrometric characteristic improvement are based on using specific features of the CdTe detectors output pulses. The energy resolution of about 1% FWHM at 662 keV has been achieved with planar CdTe detector under room temperature without decrease of peak efficiency. Standard measurement techniques give 3.7% FWHM. A significant spectrometric characteristic improvement of other room temperature semiconductor detectors such as HgI/sub 2/ and CdZnTe detectors was also obtained.<
>