Design on mixed-voltage I/O buffers with slew-rate control in low-voltage CMOS process

A new design on mixed-voltage I/O buffers with slew-rate control but without gate-oxide reliability problem in low-voltage CMOS process is proposed. The proposed circuit can effectively reduce the ground bounce effects without suffering gate-oxide reliability problems and hot-carrier degradation issues. The proposed mixed-voltage I/O buffer with slew-rate control has been designed in a 0.18-μm CMOS process to meet the 1.5-V/3.3-V applications.