Low threshold current density operation of GaInAsP-InP laser with multiple reflector microcavities

We propose and demonstrate a new type of semiconductor laser having multiple reflector microcavities for the purpose of low threshold current operation. Very uniform multiple reflector microcavity structure was fabricated by electron beam (EB) lithography and selective wet chemical etching. Due to multiple reflection effect, threshold current density as low as 310 A/cm
²
(threshold current of 30 mA) was obtained at room temperature with the total cavity length of 64 μm and the cavity width of 200 μm.